CISSOID has expanded its standard power semiconductor portfolio with the launch of a new 1200V/300A half‑bridge ...
The 2D devices fabricated using CDimension’s ultra-thin films have demonstrated up to a 1,000X improvement in ...
They also would like to use low-leakage transistors to reduce the refresh power demands of large memory arrays. Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable ...
A nanostructure made of silver and an atomically thin semiconductor layer can be turned into an ultrafast switching mirror ...
Researchers in Germany have unveiled an ultra-fast light switch that operates 10,000 times quicker than today's computing ...
Although not among the most advanced technologies, 28-nanometer chips still play a fundamental role due to their stability, ...
Drawing inspiration from the remarkable adaptability of the human eye, researchers from the Institute of Metal Research (IMR) ...
The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results