As global energy demand surges—driven by AI-hungry data centers, advanced manufacturing, and electrified ...

V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.

Odisha marked a significant milestone in its electronics manufacturing journey as Chief Minister Mohan Charan Majhi performed the groundbreaking ceremony for SiCSem's silicon carbide semiconductor ...

Shanghai Maritime University’s Yan Zhang recently created a thermal impedance model of the SiC power module. Silicon carbide power devices have seen a strong demand in electric-vehicle traction ...

Abstract: Medium voltage (MV) silicon carbide (SiC) power semiconductor modules with excellent electrothermal properties offer novel opportunities for revolutionizing high-power electronic converters ...

ROHM has developed the DOT-247, a 2-in-1 silicon carbide (SiC) molded module (SCZ40xxDTx, SCZ40xxKTx), ideal for industrial applications such as photovoltaic (PV) inverters, UPS systems and ...

Rohm has introduced the DOT-247, a 2-in-1 SiC molded module that combines two TO-247 devices to deliver higher power density. The dual structure accommodates larger chips, while the optimized internal ...

ROHM has developed the DOT-247, a 2-in-1 SiC moulded module, suitable for industrial applications such as PV inverters, UPS systems, and semiconductor relays. The module retains the versatility of the ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module ( SCZ40xxDTx, SCZ40xxKTx) ...

Ultra-Low Inductance Smart (ULIS) module can achieve five times greater energy density than predecessor designs NREL has developed an Ultra-Low Inductance Smart (ULIS) SiC power module with a ...