Abstract: In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled ...
Abstract: In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the ...
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