Leveraging ST’s robust silicon-on-insulator (SOI) process, the SRK1004 can control the MOSFET in either low-side or high-side ...
OMRON Electronic Components Europe has announced new G3VM MOSFET relays with a tiny footprint, low output capacitance, and fast response for designers tackling demanding applications, including ...
OMRON Electronic Components Europe has revealed new G3VM MOSFET relays with tiny footprint, low output capacitance, and fast ...
OMRON Electronic Components Europe has launched a new range of MOSFET relays for test and measurement, designed to help ...
OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching ...
Abstract: Silicon carbide (SiC) power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage ...
Abstract: Power cycling test (PCT) is a crucial method for evaluating the long-term reliability of SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). Existing studies on the degradation ...