Semiconductor Engineering

Oxides Bring Low Leakage Transistors To Leading-Edge Memories

Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage. Amorphous oxides are especially attractive for stacked devices because ...

The future of chips: how gate-all-around design is powering the AI era and the next node

The industry’s answer is gate-all-around (GAA). This design wraps the gate material completely around all sides, including ...
IEEE

Impact of Strain on Sub-3 nm Gate-All-Around CMOS Logic Circuit Performance Using a Neural Compact Modeling Approach

Abstract: Impact of strain of sub-3 nm gate-all-around (GAA) CMOS transistors on the circuit performance is evaluated using a neural compact model. The model was trained using 3D technology ...
IEEE

CMOS Compatible Cost-Effective eGaN HEMT Using B-Doped Schottky Barrier Gate on Compliant SOI Substrates

Abstract: This paper introduces a cost-effective CMOS-compatible enhanced mode GaN-on-SOI HEMT comparable to IMEC's platform. Notably, we employed a Boron-doped p-gate instead of Magnesium doping ...