Imec has developed a Cu-to-Cu and SiCN-to-SiCN die-to-wafer bonding process resulting in a Cu bond pad pitch of only 2µm at <350nm die-to-wafer overlay error, achieving good electrical yield. Such ...
The Chinese module maker and the Australian National University utilized phosphorus diffusion gettering and another defect mitigation strategy to improve the quality of n-type wafers. The proposed ...
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