Ikoma, Japan – Scientists from Nara Institute of Science and Technology (NAIST) used the mathematical method called automatic differentiation to find the optimal fit of experimental data up to four ...
Before circuit design can begin on any advanced semiconductor manufacturing process, the electrical behavior of the devices — transistors, diodes, resistors — must be described accurately in so-called ...
A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...
A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...
The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...
The holiday gave me a chance to play with bipolar transistor mosfet drivers again. And things did not go quite as planned. I had been using the circuit on the right quite happily from a signal ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback