IBM Microelectronics’ R&D department claims to have proven that scaling vertical transistor DRAM cells is possible to 70nm and future generation memory. At VLSI in Japan today, the company presented a ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

DRAM (dynamic random access memory) was patented on June 4, 1968, when Dr. Robert Dennard of the IBM TJ Watson Research Center was granted the patent for a one-transistor DRAM cell and the basic idea ...

At the recent 2020 International Electron Devices Meeting (IEDM), Imec presented a paper on a novel capacitor-less DRAM cell architecture. DRAM is used for main memory in systems, and today’s most ...

For applications where performance is of primary importance, designers have traditionally chosen SRAM technology over DRAM. Although commodity DRAM offers much higher density and a lower cost per bit, ...

One-transistor, one-capacitor (1T-1C) DRAM cells have been commercially implemented since at least 1999. They save die area compared to conventional 6-T DRAM cells, use less power, yield better, and ...

This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F 2 DRAM, ...

For 65nm and later-generation processes, the advanced memory has achieved fast operation (250MHz) and low active power (148mW) in a 2Mbit test chip TOKYO, September 26, 2005 -- Renesas Technology Corp ...

Dynamic random access memory (DRAM) stores data in a capacitor. These capacitors leak charge so the information fades unless the charge is refreshed periodically. Because of this refresh requirement, ...