Rohm has developed All-SiC 1,200V 600A power module, optimised for inverters and converters in solar power conditioners, UPS, and industrial power Compared with IGBTs, at a chip temperature of 150°C, ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V ...
Infineon Technologies has introduced a single power module that can handle up to 352kW in three-level solar string inverter applications. Called F3L600R10W4S7F_C22, and aimed at for 1.5kVdc inverters, ...
Winchester, UK – Microsemi Corporation is making silicon carbide diode upgrades standard on a large selection of its current portfolio of power modules for industrial, UPS, SMPS and motor drive ...
PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced a full SiC power module for solar inverter applications, which has been selected by the ...
SemiQ’s 1200-V SiC MOSFETs can be copackaged with or without a 1200-V SiC Schottky barrier diode (SBD) in SOT-227 packages. The QSiC modules provide a breakdown voltage of >1400 V and low ...
Using new silicon carbide (SiC) diodes, Siemens and its research partners have succeeded in increasing the power of frequency converters by almost ten percent. In the recently ended project MV-SiC, ...
Adoption of silicon carbide (SiC) is becoming more widespread among electric-vehicle (EV) systems such as dc-dc converters, traction inverters, and on-board chargers (OBCs) with bidirectional ...